Hot-electron transport in semiconductors /
Other Authors: | , |
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Format: | Book |
Language: | English |
Published: |
Berlin ; New York :
Springer-Verlag,
1985
Berlin ; New York : [1985], ©1985 Berlin ; New York : c1985 Berlin ; New York : 1985 Berlin ; New York : c1985 Berlin ; New York : [1985] |
Series: | Topics in applied physics ;
v. 58 Topics in applied physics v. 58 Topics in applied physics ; v. 58 Topics in applied physics v. 58 |
Subjects: |
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245 | 0 | 0 | |a Hot-electron transport in semiconductors / |c edited by L. Reggiani ; with contributions by M. Asche ... [et al.] |
246 | 3 | |a Hot electron transport in semiconductors | |
260 | |a Berlin ; |a New York : |b Springer-Verlag, |c 1985 | ||
260 | |a Berlin ; |a New York : |b Springer-Verlag, |c [1985], ©1985 | ||
260 | |a Berlin ; |a New York : |b Springer-Verlag, |c c1985 | ||
260 | 0 | |a Berlin ; |a New York : |b Springer-Verlag, |c 1985 | |
260 | 0 | |a Berlin ; |a New York : |b Springer-Verlag, |c c1985 | |
263 | |a 8502 | ||
264 | 1 | |a Berlin ; |a New York : |b Springer-Verlag, |c [1985] | |
264 | 4 | |c ©1985 | |
300 | |a xvi, 275 p. : |b ill. ; |c 24 cm | ||
300 | |a xvi, 275 pages : |b illustrations ; |c 24 cm | ||
336 | |a text |2 rdacontent | ||
336 | |a text |b txt |2 rdacontent | ||
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440 | 0 | |a Topics in applied physics ; |v v. 58 | |
440 | 0 | |a Topics in applied physics |v v. 58 | |
490 | 1 | |a Topics in applied physics ; |v v. 58 | |
490 | 1 | |a Topics in applied physics |v v. 58 | |
500 | |a Includes index | ||
500 | |a This WorldCat-derived record is shareable under Open Data Commons ODC-BY, with attribution to OCLC |5 CTY | ||
504 | |a Also available on the Internet | ||
504 | |a Includes bibliographies and index | ||
504 | |a Includes bibliographies and index | ||
505 | 0 | |a General theory -- Drift velocity and diffusion coefficients from time-of-flight measurements -- Transport parameters from microwave conductivity and noise measurements -- Multivalued distributions of hot electrons between equivalent valleys -- Streaming motion of carriers in crossed electric and magnetic fields -- Hot electrons in semiconductor heterostructures and superlattices -- Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices | |
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596 | |a 4 31 | ||
650 | 0 | |a Hot carriers | |
650 | 0 | |a Semiconductors | |
650 | 2 | |a Electron Transport | |
650 | 2 | |a Semiconductors | |
650 | 7 | |a Hot carriers |2 fast | |
650 | 7 | |a Semiconductors |2 fast | |
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