Tunable solid-state quantum memory using rare-earth-ion-doped crystal, Nd³⁺:GaN
| Main Author: | |
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| Format: | Government Document Electronic Book |
| Language: | English |
| Published: |
Adelphi, MD :
US Army Research Laboratory,
Apr 2017
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| Series: | ARL-TR (Aberdeen Proving Ground, Md.) ;
8009 |
| Subjects: |