Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
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| Format: | Book |
| Language: | English |
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Durnten-Zurich :
TTP,
[2012]
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| Series: | Diffusion and defect data Defect and diffusion forum ;
v. 332. |
| Subjects: |
Internet
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INTERNET RESOURCE |
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